Transport in Metal-Oxide-Semiconductor Structures: Mobile Ions Effects on the Oxide Properties - Engineering Materials - Hamid Bentarzi - Books - Springer-Verlag Berlin and Heidelberg Gm - 9783642266881 - February 25, 2013
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Hamid Bentarzi
Transport in Metal-Oxide-Semiconductor Structures: Mobile Ions Effects on the Oxide Properties - Engineering Materials 2011 edition

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This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure.

120 pages, 10 black & white tables, biography

Media Books     Paperback Book   (Book with soft cover and glued back)
Released February 25, 2013
ISBN13 9783642266881
Publishers Springer-Verlag Berlin and Heidelberg Gm
Pages 106
Dimensions 155 × 235 × 6 mm   ·   176 g
Language English  

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