Transport in Metal-Oxide-Semiconductor Structures: Mobile Ions Effects on the Oxide Properties - Engineering Materials - Hamid Bentarzi - Books - Springer-Verlag Berlin and Heidelberg Gm - 9783642163036 - January 16, 2011
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Transport in Metal-Oxide-Semiconductor Structures: Mobile Ions Effects on the Oxide Properties - Engineering Materials

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This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure.


150 pages, 10 black & white tables, biography

Media Books     Hardcover Book   (Book with hard spine and cover)
Released January 16, 2011
ISBN13 9783642163036
Publishers Springer-Verlag Berlin and Heidelberg Gm
Pages 106
Dimensions 155 × 242 × 11 mm   ·   317 g
Language French  

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