Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications - IEEE Press - Kimoto, Tsunenobu (Kyoto University, Japan) - Books - John Wiley & Sons Inc - 9781118313527 - November 21, 2014
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Kimoto, Tsunenobu (Kyoto University, Japan)
Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications - IEEE Press

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A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001.

400 pages

Media Books     Hardcover Book   (Book with hard spine and cover)
Released November 21, 2014
ISBN13 9781118313527
Publishers John Wiley & Sons Inc
Pages 400
Dimensions 251 × 179 × 32 mm   ·   1.25 kg
Language English  

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