Nitride Wide Bandgap Semiconductor Material and Electronic Devices - Hao, Yue (Xidian University, Xi'an, PR of China) - Books - Taylor & Francis Ltd - 9780367574369 - June 30, 2020
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Hao, Yue (Xidian University, Xi'an, PR of China)
Nitride Wide Bandgap Semiconductor Material and Electronic Devices 1st edition

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This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs).

392 pages

Media Books     Paperback Book   (Book with soft cover and glued back)
Released June 30, 2020
ISBN13 9780367574369
Publishers Taylor & Francis Ltd
Pages 392
Dimensions 150 × 220 × 10 mm   ·   771 g
Language English  

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